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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">vestifm</journal-id><journal-title-group><journal-title xml:lang="ru">Известия Национальной академии наук Беларуси. Серия физико-математических наук</journal-title><trans-title-group xml:lang="en"><trans-title>Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1561-2430</issn><issn pub-type="epub">2524-2415</issn><publisher><publisher-name>The Republican Unitary Enterprise Publishing House "Belaruskaya Navuka"</publisher-name></publisher></journal-meta><article-meta><article-id custom-type="elpub" pub-id-type="custom">vestifm-147</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ФИЗИКА</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>PHYSICS</subject></subj-group></article-categories><title-group><article-title>ДИЭЛЕКТРИЧЕСКИЕ ХАРАКТЕРИСТИКИ МОНОКРИСТАЛЛОВ ПОЛУПРОВОДНИКОВЫХ СОЕДИНЕНИЙ Cu2ZnSnS4 И Cu2ZnSnSe4</article-title><trans-title-group xml:lang="en"><trans-title>DIELECTRIC PROPERTIES OF SINGLE CRYSTALS OF Cu2ZnSnS4 AND Cu2ZnSnSe4 SEMICONDUCTORS</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Гуртовой</surname><given-names>В. Г.</given-names></name><name name-style="western" xml:lang="en"><surname>Hurtavy</surname><given-names>V. G.</given-names></name></name-alternatives><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Шелег</surname><given-names>А. У.</given-names></name><name name-style="western" xml:lang="en"><surname>Sheleg</surname><given-names>A. U.</given-names></name></name-alternatives><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Научно-практический центр Национальной академии наук Беларуси по материаловедению, Минск</institution></aff><aff xml:lang="en"><institution>Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2014</year></pub-date><pub-date pub-type="epub"><day>19</day><month>05</month><year>2016</year></pub-date><volume>0</volume><issue>4</issue><fpage>87</fpage><lpage>91</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Гуртовой В.Г., Шелег А.У., 2016</copyright-statement><copyright-year>2016</copyright-year><copyright-holder xml:lang="ru">Гуртовой В.Г., Шелег А.У.</copyright-holder><copyright-holder xml:lang="en">Hurtavy V.G., Sheleg A.U.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://vestifm.belnauka.by/jour/article/view/147">https://vestifm.belnauka.by/jour/article/view/147</self-uri><abstract><p>Проведены исследования диэлектрической проницаемости и удельной электропроводности монокристаллов Cu2ZnSnS4 и Cu2ZnSnSe4 в интервале температур 100-300 К на частотах измерительного поля 103-106 Гц. Определены значения обобщенной энергии активации основных носителей заряда в этих кристаллах. Показано, что абсолютные значения изученных характеристик возрастают при увеличении температуры. Выявлена дисперсия диэлектрических свойств исследованных монокристаллов: с ростом частоты значения диэлектрической проницаемости уменьшаются, а удельной электропроводности - увеличиваются. Обнаружено, что диэлектрическая проницаемость и проводимость у монокристаллов Cu2ZnSnSe4 больше, чем у Cu2ZnSnS4.</p></abstract><trans-abstract xml:lang="en"><p>The dielectric permittivity and electrical conductivity of Cu2ZnSnS4 and Cu2ZnSnSe4 single crystals are investigated in the temperature range 100–300 K at the measuring field frequencies of 103–106 Hz. The values of the majority charge carriers generalized activation energy in these crystals are determined. It is shown, that the absolute values of the studied characteristics increases with the temperature. The dielectric properties dispersion of the studied single crystals is revealed: with the frequency growth the dielectric constant values decreases, and the electrical conductivity increases. It was found that the dielectric constant and conductivity of Cu2ZnSnSe4 single crystals more than Cu2ZnSnS4.</p></trans-abstract><funding-group><funding-statement xml:lang="ru">Белорусский РФФИ</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Jackson P., hariskos D., Lotter E. et al. // Progress in Photovoltaics: Research and Applications. 2011. Vol. 19, N 7. P. 894–897.</mixed-citation><mixed-citation xml:lang="en">Jackson P., hariskos D., Lotter E. et al. // Progress in Photovoltaics: Research and Applications. 2011. Vol. 19, N 7. P. 894–897.</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">contreras M. A., Mansfield L. M., Egaas B. et al. // Progress in Photovoltaics: Research and Applications. 2012. Vol. 20, N 7. P. 843–850.</mixed-citation><mixed-citation xml:lang="en">contreras M. A., Mansfield L. M., Egaas B. et al. // Progress in Photovoltaics: Research and Applications. 2012. Vol. 20, N 7. P. 843–850.</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">Grossberg M., Krustok J., Raudoja J. et al. // Appl. Phys. Lett. 2012. Vol. 101, N 10. P. 102102–102104.</mixed-citation><mixed-citation xml:lang="en">Grossberg M., Krustok J., Raudoja J. et al. // Appl. Phys. Lett. 2012. Vol. 101, N 10. P. 102102–102104.</mixed-citation></citation-alternatives></ref><ref id="cit4"><label>4</label><citation-alternatives><mixed-citation xml:lang="ru">León M., Levcenko S., Serna R. et al. // Mater. Chem. and Phys. 2013. Vol. 141, N 1. P. 58–62.</mixed-citation><mixed-citation xml:lang="en">León M., Levcenko S., Serna R. et al. // Mater. Chem. and Phys. 2013. Vol. 141, N 1. P. 58–62.</mixed-citation></citation-alternatives></ref><ref id="cit5"><label>5</label><citation-alternatives><mixed-citation xml:lang="ru">Kumar M., Persson c. // Intern. J. of Theoretical and Applied Sciences. 2013. Vol. 5, N 1. P. 1–8.</mixed-citation><mixed-citation xml:lang="en">Kumar M., Persson c. // Intern. J. of Theoretical and Applied Sciences. 2013. Vol. 5, N 1. P. 1–8.</mixed-citation></citation-alternatives></ref><ref id="cit6"><label>6</label><citation-alternatives><mixed-citation xml:lang="ru">Todorov T. K., Tang J., Bag S. et al. // Advanced Energy Materials. 2013. Vol. 3, N 1. P. 34–38.</mixed-citation><mixed-citation xml:lang="en">Todorov T. K., Tang J., Bag S. et al. // Advanced Energy Materials. 2013. Vol. 3, N 1. P. 34–38.</mixed-citation></citation-alternatives></ref><ref id="cit7"><label>7</label><citation-alternatives><mixed-citation xml:lang="ru">Wang W., Winkler M. T., Gunawan O. et al. // Advanced Energy Materials. 2014. Vol. 4, N 7. P. 36–45.</mixed-citation><mixed-citation xml:lang="en">Wang W., Winkler M. T., Gunawan O. et al. // Advanced Energy Materials. 2014. Vol. 4, N 7. P. 36–45.</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
