vestifmИзвестия Национальной академии наук Беларуси. Серия физико-математических наукProceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series1561-24302524-2415The Republican Unitary Enterprise Publishing House "Belaruskaya Navuka"vestifm-269Research ArticleФИЗИКАPHYSICSИНЖЕКЦИОННЫЙ ОТЖИГ РАДИАЦИОННЫХ ДЕФЕКТОВ МЕЖДОУЗЕЛЬНОГО ТИПА В ЛЕГИРОВАННЫХ БОРОМ КРИСТАЛЛАХ КРЕМНИЯINJECTION ANNEALING OF RADIATION-INDUCED INTERSTITIAL DEFECTS IN BORON DOPED SILICON CRYSTALSМакаренкоЛ. Ф.MakarenkoL. F.

 

Ph. D. (Physics and Mathematics), Assistant Professor

makarenko@bsu.byЛастовскийС. Б.LastovskiiS. B.

кандидат физико-математических наук, заведующий лабораторией

Ph. D. (Physics and Mathe ma-tics), Head of the Laboratory

lastov@ifttp.bas-net.byЯкушевичА. С.YakushevichH. S.

младший научный сотрудник

Junior Researcher

yakushevich@ifttp.bas-net.byМоллМ.MollM.

доктор философии (физика), руководитель проекта, EP Depart ment 

Ph. D. (Physics), Pro ject Leader, EP Department

michael.moll@cern.chПинтилиеИ.PintilieI.

доктор философии (физика), старший научный сотрудник

 

Ph. D. (Physics), Senior Researcher

ioana_bcf@yahoo.comБелорусский государственный университетBelarusian State UniversityНаучно-практический центр Национальной академии наук Беларуси по материаловедениюScientific and Practical Materials Research Centre of the National Academy of Sciences of BelarusЦЕРН, ЖеневаCERN, GenevaНациональный институт физики материаловNational Institute of Materials Physics20170910201703108117Copyright © Макаренко Л.Ф., Ластовский С.Б., Якушевич А.С., Молл М., Пинтилие И., 20172017Макаренко Л.Ф., Ластовский С.Б., Якушевич А.С., Молл М., Пинтилие И.Makarenko L.F., Lastovskii S.B., Yakushevich H.S., Moll M., Pintilie I.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://vestifm.belnauka.by/jour/article/view/269

С использованием одних и тех же n+–p диодных структур проведено изучение влияния инжекции электронов в p-область диода на отжиг в ней простейших дефектов междоузельного типа, созданных облучением α-частицами. Обнаружено, что собственные междоузельные атомы Si обладают наиболее высокой чувствительностью к инжекции. При температуре жидкого азота и плотности прямого тока 10–20 мА/см2 постоянная времени их отжига составляет единицы секунд. Для активации атомов междоузельного бора при Т ≤ 140 К требуются более высокие плотности прямого тока (≥ 100 мА/см2). В отличие от двух предыдущих случаев, пропускание прямого тока через n+–p-переход не только ускоряет, но даже замедляет отжиг междоузельного углерода. Высказано предположение, что только реакции междоузельных атомов, которые характеризуются сильным электрон-фононным взаимодействием, могут быть ускорены в результате рекомбинационных процессов.

 

 

 

 

Using the same n+–p diode structures, the effect of injection of minority charge carriers on the annealing of various interstitial defects has been studied in silicon irradiated with α-particles. It has been found that the self-interstitial silicon atoms (Sii) possess the highest sensitivity to forward current injection. At a liquid nitrogen temperature and a forward current density of 10–20 mA/cm2, the time constant for Sii annealing is about a few seconds. To activate the interstitial boron atoms at Т ≤ 140 K, substantially higher direct current densities are required (≥ 100 mA/cm2). However, it has been found that the forward current injection not only enhances, but even causes the retardation of interstitial carbon annealing. It is suggested that only the reactions of interstitial atoms, characterized by a strong electron-phonon coupling, can be enhanced by recombination processes.

 

 

 

 

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The authors declare that there are no conflicts of interest present.