vestifmИзвестия Национальной академии наук Беларуси. Серия физико-математических наукProceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series1561-24302524-2415The Republican Unitary Enterprise Publishing House "Belaruskaya Navuka"vestifm-270Research ArticleФИЗИКАPHYSICSШЫРЫНЯ ЗАБАРОНЕНАЙ ЗОНЫ І АЖЭ-РЭКАМБІНАЦЫЯ Ў СВЯТЛОДЫЁДАХ НА АСНОВЕ GaInAsSb ПРЫ ТЭМПЕРАТУРАХ 10–300 КAMPLIFIED LUMINESCENCE AND AUGER RECOMBINATION IN GaInAsSb-BASED LEDS IN THE TEMPERATURE RANGE OF 10–300 KЛебядокЯ. В.LebiadokY. V.

кандидат физико-математических наук, заведующий лабораторией оптико- электронного приборостроения

Ph. D. (Physics and Mathematics), Head of the Laboratory of Optoelectronic Engineering

y.lebiadok@ifanbel.bas-net.byКабанаўД. М.KabanauD. M.

младший научный сотрудник лаборатории оптико-электронного приборостроения

Junior Researcher of the Laboratory of Optoelectronic Engineering

d.kabanau@ifanbel.bas-net.byДНВА «Оптыка, оптаэлектроніка i лазерная тэхніка»SSPA “Optics, Optoelectronics and Laser Technology”20170910201703118126Copyright © Лебядок Я.В., Кабанаў Д.М., 20172017Лебядок Я.В., Кабанаў Д.М.Lebiadok Y.V., Kabanau D.M.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://vestifm.belnauka.by/jour/article/view/270

На падставе эксперыментальных спектраў выпрамянення для актыўнага пласта святлодыёдаў на аснове гетэраструктур Ga1–xInxAsySb1–y/AlGaAsSb былі атрыманы параметры Варшні тэмпературнай залежнасці шырыні забароненай зоны ў інтэрвале тэмператур 10–300 К, а таксама тэмпературная залежнасць велічыні энергіі спін-арбітальнага расшчаплення. Для тэмператур 10–80 К працэсам, што абмяжоўвае рост інтэнсіўнасці выпрамянення, з’яўляецца працэс ажэ-рэкамбінацыі, для якога энергія рэкамбінацыі электронна-дзіркавай пары перадаецца дзірцы з пераходам апошняй у спін-арбітальную зону. З павышэннем тэмпературы больш за 100 К адбываецца рост каэфіцыента ажэ-рэкамбінацыі для працэсу з удзелам двух электронаў і цяжкай дзіркі, які суправаджаецца ўзбуджэннем электрона з яго пераходам у высокаэнергетычны стан у зоне праводнасці. Сума гэтых працэсаў абумоўлівае тушэнне выпрамянення з павелічэннем тэмпературы больш за 150 К.

The parameters for a temperature dependence of the band gap in the temperature range of 10–300 K and for a temperature dependence of spin-orbit splitting energy were obtained using the experimental emission spectra for LEDs based on Ga1–xInxAsySb1–y/AlGaAsSb heterostructures. For temperatures of 10–80 K, the rise of the emission intensity is limited by the Auger recombination process, for which the recombination energy of an electron-hole pair is transferred to a hole with its transition to the spin-orbital band. With an increase in a temperature of more than 100 K, there is a rise of the coefficient of the Auger recombination process, for which the energy released by the recombination of an electron-hole pair excites another electron in the conduction band. The sum of these processes results in quenching the LED emission with increasing temperature over 150 K.

 

 

 

 

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The authors declare that there are no conflicts of interest present.