vestifmИзвестия Национальной академии наук Беларуси. Серия физико-математических наукProceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series1561-24302524-2415The Republican Unitary Enterprise Publishing House "Belaruskaya Navuka"10.29235/1561-2430-2018-54-3-360-368vestifm-340Research ArticleФИЗИКАPHYSICSСветоизлучающие структуры на основе нестехиометрического нитрида кремнияBlue and red light-emitting non-stoichiometric silicon nitride-based structuresРомановИ. А.RomanovI. A.

Романов Иван Александрович – аспирант факультета радиофизики и компьютерных технологий Белорусского государственного университета, младший научный сотрудник НИЛ материалов и приборных структур микро- и наноэлектроники, Белорусский государственный университет.

ул. Курчатова, 1, 220108, Минск.

Ivan A. Romanov – Postgraduate Student of the Department of Physical Electronics and Nanotechology, Junior Researcher in the Materials and Device Structures at the Micro- and Nanoelectronics Laboratory.

1,  Kurchatov  Str.,  220108,  Minsk.

romivan@bsu.byПархоменкоИ. Н.ParkhomenkoI. N.

Пархоменко Ирина Николаевна – кандидат физико-математических наук, старший научный сотрудник НИЛ материалов и приборных структур микро- и наноэлектроники.

ул. Курчатова, 5, 220108, Минск.

Irina N. Parkhomenko – Ph. D. (Physics and Mathematics), Senior Researcher in the Materials and Device Structures at the Micro- and Nanoelectronics Laboratory.

5, Kurchatov Str., 220108, Minsk.

parhomir@yandex.byВласуковаЛ. А.VlasukovaL. A.

Власукова Людмила Александровна – кандидат физико-математических наук, заведующий НИЛ материалов и приборных структур микро- и наноэлектроники.

ул. Курчатова, 5, 220108, Минск.

Liudmila A. Vlasukova – Ph. D. (Physics and Mathematics),  Head  of  the  Materials  and  Device  Structures  at the Micro- and Nanoelectronics Laboratory.

5, Kurchatov Str., 220108, Minsk.

vlasukova@bsu.byКомаровФ. Ф.KomarovF. F.

Комаров Фадей Фадеевич – член-корреспондент, доктор физико-математических наук, заведующий лабораторией элионики.

ул. Курчатова, 7, 220108, Минск.

Fadei F. Komarov – Corresponding Member, Dr. Sc. (Physics and Mathematics), Professor, Head of the Elionics Laboratory.

7, Kurchatov Str., 220108, Minsk.

komarovf@bsu.byКовальчукН. С.KovalchukN. S.

Ковальчук Наталья Станиславовна – кандидат технических наук, заместитель главного инженера ОАО «Интеграл».

ул. Казинца, 121 А, 220108, Минск.

Natalia S. Kovalchuk – Ph. D. (Engineering), Deputy Chief Engineer.

121 A, Kazinets  Str.,  220108,  Minsk.

7033696@mail.ruМильчанинО. В.MilchaninO. V.

Мильчанин Олег Владимирович – старший научный сотрудник лаборатории элионики.

ул. Курчатова, 7, 220108, Минск.

Oleg V. Milchanin – Senior Researcher of the Elionics Laboratory.

7, Kurchatov Str., 220108, Minsk.

milchanin@tut.byМоховиковМ. А.MakhavikouM. A.

Моховиков Максим Александрович – младший научный сотрудник лаборатории элионики.

ул. Курчатова, 7, 220108, Минск.

Maxim A. Makhavikou – Junior Researcher of the Elionics Laboratory.

7, Kurchatov Str., 220108, Minsk.

m.mohovikov@gmail.comМудрыйА. В.MudryiA. V.

Мудрый Александр Викторович – кандидат физико-математических наук, главный научный сотрудник.

ул. П. Бровки, 19, 220072, Минск.

Alexander V. Mudryi – Ph. D. (Physics and Mathematics), Chief Researcher.

19, Brovka Str., 220072, Minsk.

mudryi@ifttp.bas-net.byЖивулькоВ. Д.ZhivulkoV. D.

Живулько Вадим Дмитриевич – младший научный сотрудник.

ул. П. Бровки, 19, 220072, Минск.

Vadim D. Zhivulko – Junior Researcher.

19, Brovka Str., 220072, Minsk.

vad.zhiv@gmail.comЛуХонг-ЛангLuHong-Liang

Хонг-Ланг Лу – доктор философии (физика), доцент.

220, Handan Rd., 200433, Shanghai.

Hong-Liang Lu – Ph. D. (Physics), Associate Professor, Department  of  Microelectronics.

220, Handan Rd., 200433, Shanghai.

honglianglu@fudan.edu.cnБелорусский государственный университетБеларусьBelarusian State UniversityBelarusИнститут прикладных физических проблем им. А.Н. Севченко Белорусского государственного университетаБеларусьA.N. Sevchenko Institute of Applied Physical Problems of the Belarusian State UniversityBelarusОАО «Интеграл»БеларусьJoint Stock Company “Integral”BelarusНаучно-практический центр Национальной академии наук Беларуси по материаловедениюБеларусьScientific and Practical Materials Research Center of the National Academy of Sciences of BelarusBelarusШкола микроэлектроники Фуданского университетаКитайState Key Laboratory of ASIC and System, School of Microelectronics, Fudan UniversityChina201831102018543360368Copyright © Романов И.А., Пархоменко И.Н., Власукова Л.А., Комаров Ф.Ф., Ковальчук Н.С., Мильчанин О.В., Моховиков М.А., Мудрый А.В., Живулько В.Д., Лу Х., 20182018Романов И.А., Пархоменко И.Н., Власукова Л.А., Комаров Ф.Ф., Ковальчук Н.С., Мильчанин О.В., Моховиков М.А., Мудрый А.В., Живулько В.Д., Лу Х.Romanov I.A., Parkhomenko I.N., Vlasukova L.A., Komarov F.F., Kovalchuk N.S., Milchanin O.V., Makhavikou M.A., Mudryi A.V., Zhivulko V.D., Lu H.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://vestifm.belnauka.by/jour/article/view/340

Методом химического газофазного осаждения на кремниевых подложках p-типа изготовлены две трехслойные структуры SiO2 /SiNx /SiO2 с нестехиометрическими пленками нитрида кремния, обогащенными кремнием (x = 0,9) или азотом (x = 1,4), в качестве активных слоев. Активные слои SiNx нестехиометрического состава (x = 0,9 и x = 1,4) получены при различном соотношении реагирующих газов (SiH2 Cl2 /NH3 ) в процессе осаждения (8/1 и 1/8 соответственно). Методами спектральной эллипсометрии и фотолюминесценции показано, что показатель преломления, поглощение и люминесцентные свойства зависят от стехиометрического состава нитрида кремния. Структуры с активными слоями нитрида с избытком кремния и азота излучают в красной (1,9 эВ) и синей (2,6 эВ) областях спектра соответственно, причем интенсивность свечения сравнима для двух образцов. Быстрая термическая обработка приводит к уменьшению интенсивности и сужению спектра фотолюминесценции образца с активным слоем SiN1,4 , тогда как для образца с активным слоем SiN0,9 наблюдается возрастание интенсивности люминесценции с уширением спектра в коротковолновую область после отжига. Природа видимого свечения и влияние термообработки объясняются c учетом существования протяженной зоны хвостовых состояний.

Структуры с чередующимися слоями оксида и нитрида кремния представляют практический интерес для создания эффективных источников света на базе кремниевой технологии.

The two triple-layered SiO2 /SiNx /SiO2  structures with Si-rich and N-rich silicon nitride active layer were fabricated on p-type Si-substrates by chemical vapour deposition. The SiNx  layer of different composition (x = 0.9 and x = 1.4) was obtained by changing the ratio of the SiH2 Cl2 /NH3 flow rates during deposition of a silicon nitride active layer (8/1 and 1/8, respectively). The spectroscopic ellipsometry and photoluminescence (PL) measurements showed that the refractive index, the absorbance and luminescence properties depend on a chemical composition of silicon nitride layers. The structures with Si-rich and N-rich SiNx  active layers emit in the red (1.9 eV) and blue (2.6 eV) spectral ranges, respectively. The PL intensities of different structures are comparable. The rapid thermal annealing results in the intensity decrease and in the PL spectra narrowing in the case of SiN1,4 active layer, whereas the increase in the emission intensity and the PL spectra broadening are observed in the case of the annealed sample with a SiN0,9 active layer. The PL origin and the effect of annealing treatment have been discussed, taking into account the band tail mechanism of radiative recombination. Multilayered (SiO2 /SiNx )n /Si structures are of practical interest for creation of effective light sources on the basis of current Si technology.

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