vestifmИзвестия Национальной академии наук Беларуси. Серия физико-математических наукProceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series1561-24302524-2415The Republican Unitary Enterprise Publishing House "Belaruskaya Navuka"10.29235/1561-2430-2020-56-1-102-113vestifm-509Research ArticleФИЗИКАPHYSICSОсобенности адсорбции и десорбции водяных паров на поверхности пленок нестехиометрического диоксида оловаFeatures of water vapor adsorption and desorption on the surface of non-stoichiometric tin dioxide filmsАдамчукД. В.AdamchuckD. V.

Адамчук Дмитрий Вячеславович – научный сотрудник НИЛ физики электронных материалов кафедры физики полупроводников и наноэлектроники физического факультета

пр. Независимости, 4, 220030, г. Минск

Dzmitry V. Adamchuk – Reseacher, Laboratory of Physics of Electronic Materials, Department of Semiconductor Physics and Nanoelectronics, Faculty of Physics

4, Nezavisimosty Ave., 220030, Minsk

AdamchukDV@bsu.byКсеневичВ. К.KsenevichV. K.

Ксеневич Виталий Казимирович – кандидат физико-математических наук, доцент, заведующий НИЛ физики электронных материалов кафедры физики полупроводников и наноэлектроники физического факультета

пр. Независимости, 4, 220030, г. Минск

Vitaly K. Ksenevich – Ph. D. (Physics and Mathematics), Associate Professor, Head of the Laboratory of Physics of Electronic Materials, Department of Semiconductor Physics and Nanoelectronics, Faculty of Physics

4, Nezavisimosty Ave., 220030, Minsk

Ksenevich@bsu.byПоклонскийН. А.PoklonskiN. A.

Поклонский Николай Александрович – доктор физико-математических наук, профессор, профессор кафедры физики полупроводников и наноэлектроники физического факультета

пр. Независимости, 4, 220030, г. Минск

Nikolai A. Poklonski – Dr. Sc. (Physics and Mathematics), Professor, Professor of the Department of Semiconductor Physics and Nanoelectronics, Faculty of Physics

4, Nezavisimosty Ave., 220030, Minsk

Poklonski@bsu.byКовалевА. И.KavaleuA. I.

Ковалев Александр Игоревич – кандидат физико-математических наук, старший преподаватель кафедры физики полупроводников и наноэлектроники физического факультета

пр. Независимости, 4, 220030, г. Минск

Aliaksandr I. Kavaleu – Ph. D. (Physics and Mathematics), Senior Lecturer of the Department of Semiconductor Physics and Nanoelectronics, Faculty of Physics

4, Nezavisimosty Ave., 220030, Minsk

KovalevAI@bsu.byБелорусский государственный университетБеларусьBelarusian State UniversityBelarus202006042020561102113Copyright © Адамчук Д.В., Ксеневич В.К., Поклонский Н.А., Ковалев А.И., 20202020Адамчук Д.В., Ксеневич В.К., Поклонский Н.А., Ковалев А.И.Adamchuck D.V., Ksenevich V.K., Poklonski N.A., Kavaleu A.I.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://vestifm.belnauka.by/jour/article/view/509

Исследовано влияние процессов адсорбции и десорбции водяных паров на поверхности нанокристаллических пленок SnO2−δ с различной концентрацией кислородных вакансий на их электропроводность при комнатной температуре. Пленки SnO2−δ были синтезированы методом реактивного магнетронного напыления олова в аргон-кислородной плазме с последующим двухстадийным окислительным отжигом на воздухе. Концентрация кислородных вакансий в пленках варьировалась посредством изменения температуры отжига на второй стадии в диапазоне 350–400 °C. Установлено, что в пленках с наибольшей концентрацией кислородных вакансий (~1020 см−3) в области малых значений относительной влажности (менее ~30 %) наблюдается увеличение электропроводности в силу диссоциативной адсорбции молекул воды с образованием гидроксильных групп. Обнаружено, что адсорбция водяных паров на поверхности пленок SnO2−δ при комнатной температуре при значениях относительной влажности более ~30 % приводит к уменьшению электропроводности образцов. Обнаружена генерация положительного или отрицательного импульса ЭДС между открытой и закрытой водонепроницаемым материалом поверхностями нанокристаллических пленок SnO2–δ при адсорбции или десорбции на них паров воды соответственно. Установлено, что с увеличением концентрации кислородных вакансий в пленках изменение сопротивления и величина генерируемой ЭДС при адсорбции-десорбции паров воды возрастают.

Herein, the influence of water vapor adsorption and desorption processes on the surface of SnO2−δ nanocrystalline films with different concentrations of oxygen vacancies on their electrical conductivity at room temperature was studied. SnO2−δ films were synthesized by means of reactive magnetron sputtering of tin in an argon-oxygen plasma followed by 2-stage oxidative annealing. The concentration of oxygen vacancies in the films was varied by changing the 2nd stage annealing temperature within the range 350–400 °C. It was found that in the films with the highest concentration of oxygen vacancies (~1020 cm−3) in the region of low relative humidity (less than ~30 %), an increase in electrical conductivity was observed due to the dissociative adsorption of water molecules with the formation of hydroxyl groups. The adsorption of water vapor on the surface of SnO2−δ films at room temperature at relative humidity values higher than ~30 % was found to induce a decrease in the electrical conductivity of the samples. The generation of positive and negative EMF pulses between the open surface of SnO2−δ nanocrystalline films and the one covered by waterproof materials under the adsorption and desorption of water vapor, respectively, was detected. The change of resistance and the generated EMF value under the adsorption-desorption processes was found to increase with the concentration of free charge carriers in the films.

пленки диоксида оловакислородные вакансииводяной парадсорбциядесорбцияtin oxide filmsoxygen vacancieswater vaporadsorptiondesorptionРабота выполнена в рамках задания 3.3.1 ГПНИ «Конвергенция-2020» (подпрограмма «Объединение»); белорусско-литовского проекта (№ Ф19ЛИТГ-001 и № S-LB-19-5), финансируемого ГКНТ Республики Беларусь и Научным советом Литвы и проектов № 691010 HUNTER и № 871284 SSHARE программы ЕС H2020-MSCA-RISE-2015.This work was supported by the Belarusian National Research Programme “Convergence- 2020” (subprogram “Integration”, task No. 3.3.1), the State Committee on Science and Technology of the Republic of Belarus (grant No. Ф19ЛИТГ-001), the Research Council of Lithuania (grant No. S-LB-19-5), and by the EU Programme H2020-MSCA-RISE-2015 (grants No. 691010 HUNTER and No. 871284 SSHARE).ReferencesShankar, P. Gas sensing mechanism of metal oxides: The role of ambient atmosphere, type of semiconductor and ga ses -A review / P. Shankar, J. B. B. Rayappan // Sci. 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The authors declare that there are no conflicts of interest present.