vestifmИзвестия Национальной академии наук Беларуси. Серия физико-математических наукProceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series1561-24302524-2415The Republican Unitary Enterprise Publishing House "Belaruskaya Navuka"10.29235/1561-2430-2021-57-4-495-505vestifm-619Research ArticleФИЗИКАPHYSICSМатематическое и компьютерное моделирование полупроводниковых систем различной размерности и элементов приборных структур на их основеMathematical and computer simulation of semiconductor systems of various dimensions and the elements of device structures based on themhttps://orcid.org/0000-0002-0799-6950ПоклонскийН. А.PoklonskiN. A.

Поклонский Николай Александрович – доктор физико-математических наук, профессор

пр. Независимости, 4, 220030, г. Минск

Nikolai A. Poklonski – Dr. Sc. (Physics and Mathematics), Professor

4, Nezavisimosti Ave., 220030, Minsk

poklonski@bsu.byБелорусский государственный университетBelarusian State University202127122021574495505Copyright © Поклонский Н.А., 20212021Поклонский Н.А.Poklonski N.A.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://vestifm.belnauka.by/jour/article/view/619

В статье (в форме мини-обзора) отражены результаты выполненных на физическом факультете Белорусского государственного университета за последние 25 лет теоретических (и отчасти экспериментальных) исследований электрических, оптических и магнитных явлений в трехмерных, двумерных, одномерных и нульмерных системах и элементах приборных структур из германия, кремния, углерода и других химических элементов.

The article, in the form of a minireview, reflects the results of theoretical, and partly experimental investigations of the electrical, optical and magnetic phenomena in three-dimensional, two-dimensional, one-dimensional and zero-dimensional systems and elements of device structures made of germanium, silicon, carbon and other chemical elements carried out at the Faculty of Physics of Belarusian State University over the past 25 years.

моделирование разноразмерных кристаллических системводородоподобные (двухзарядные) атомы примесейтрехзарядные точечные дефекты в полупроводникахионизационное равновесиетеория прыжковой миграции электронов и дырок по дефектамграфенодностенные углеродные нанотрубкифуллереныэлементы приборных структурsimulation of crystalline systems of various dimensionshydrogen-like (double-charged) impurity atomstriple-charged point defects in semiconductorsionization equilibriumtheory of hopping transport of electrons and holes via defectsgraphenesingle-wall carbon nanotubesfullereneselements of device structuresРабота поддержана государственными программами научных исследований «Конвергенция-2025» и «Материаловедение, новые материалы и технологии» Республики БеларусьReferencesPoklonski N. A. Semiconductors in the world of materials. Nauka i Innovatsii = Science and Innovations, 2016, no. 8, pp. 64–69 (in Russian).Poklonski N. A. Semiconductors in the world of materials. 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Physics and Mathematics series, 2020, vol. 56, no. 1, pp. 92–101 (in Russian). https://doi.org/10.29235/1561-2430-2020-56-1-92-101Poklonski N. A., Dzeraviaha A. N., Vyrko S. A. Model of stationary migration of free and hopping via acceptors holes in a crystalline semiconductor. Vestsi Natsyianal’nai akademii navuk Belarusi. Seryia fizika-matematychnykh navuk = Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics series, 2020, vol. 56, no. 1, pp. 92–101 (in Russian). https://doi.org/10.29235/1561-2430-2020-56-1-92-101Poklonskii N. A., Lopatin S. Yu. A model of hopping and band DC photoconduction in doped crystals. Physics of the Solid State, 2000, vol. 42, no. 2, pp. 224–229. https://doi.org/10.1134/1.1131150Poklonskii N. A., Lopatin S. Yu. A model of hopping and band DC photoconduction in doped crystals. Physics of the Solid State, 2000, vol. 42, no. 2, pp. 224–229. https://doi.org/10.1134/1.1131150Poklonskii N. A., Lopatin S. Yu., Zabrodskii A. G. A lattice model of nearest-neighbor hopping conduction and its application to neutron-doped Ge:Ga. Physics of the Solid State, 2000, vol. 42, no. 3, pp. 441–449. https://doi. org/10.1134/1.1131228Poklonskii N. A., Lopatin S. Yu., Zabrodskii A. G. A lattice model of nearest-neighbor hopping conduction and its application to neutron-doped Ge:Ga. Physics of the Solid State, 2000, vol. 42, no. 3, pp. 441–449. https://doi. org/10.1134/1.1131228Poklonski N. A., Lopatin S. Yu. A lattice model of thermopower in hopping conduction: application to neutron-doped crystalline germanium. Physics of the Solid State, 2001, vol. 43, no. 12, pp. 2219–2228. https://doi.org/10.1134/1.1427945Poklonski N. A., Lopatin S. Yu. A lattice model of thermopower in hopping conduction: application to neutron-doped crystalline germanium. Physics of the Solid State, 2001, vol. 43, no. 12, pp. 2219–2228. https://doi.org/10.1134/1.1427945Poklonski N. A., Vyrko S. A., Zabrodski A. G. 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The authors declare that there are no conflicts of interest present.