vestifmИзвестия Национальной академии наук Беларуси. Серия физико-математических наукProceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series1561-24302524-2415The Republican Unitary Enterprise Publishing House "Belaruskaya Navuka"10.29235/1561-2430-2025-61-2-139-148vestifm-839Research ArticleФИЗИКАPHYSICSМоделирование баллистического квантово-барьерного полевого транзистора на основе металлической одностенной углеродной нанотрубки типа zigzagSimulation of a ballistic quantum-barrier field-effect transistor based on a zigzag metallic single-wall carbon nanotubeПоздняковД. В.PozdnyakovD. V.

Поздняков Дмитрий Викторович – кандидат физико-математических наук, доцент, ведущий научный сотрудник

пр. Независимости 4, 220030, Минск

Dmitry V. Pozdnyakov – Ph. D. (Physics and Mathematics), Associate Professor, Leading Researcher

4, Nezavisimosti Ave., 220030, Minsk

pozdnyakovdv@bsu.byБорздовА. В.BorzdovA. V.

Борздов Андрей Владимирович – кандидат физико-математических наук, ведущий научный сотрудник

пр. Независимости 4, 220030, Минск

Andrei V. Borzdov – Ph. D. (Physics and Mathematics), Leading Researcher

4, Nezavisimosti Ave., 220030, Minsk

borzdovav@bsu.byБорздовВ. М.BorzdovV. M.

Борздов Владимир Михайлович – доктор физико- математических наук, профессор, заведующий кафедрой физической электроники и нанотехнологий

пр. Независимости 4, 220030, Минск

Vladimir M. Borzdov – Dr. Sc. (Physics and Mathematics), Professor, Head of the Department of Physical Electronics and Nanotechnologies

4, Nezavisimosti Ave., 220030, Minsk

borzdov@bsu.byБелорусский государственный университетBelarusian State University202511072025612139148Copyright © Поздняков Д.В., Борздов А.В., Борздов В.М., 20252025Поздняков Д.В., Борздов А.В., Борздов В.М.Pozdnyakov D.V., Borzdov A.V., Borzdov V.M.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://vestifm.belnauka.by/jour/article/view/839

Рассмотрена одна из возможных конструкций двухзатворного квантово-барьерного полевого транзистора на основе металлической одностенной углеродной нанотрубки типа zigzag. Рассчитаны вольт-амперные характеристики транзистора с оптимальной геометрией в рамках разработанной комбинированной физико-математической модели, описывающей перенос носителей заряда в его проводящем канале с учетом как квантово-размерных эффектов, так и фононного рассеяния частиц. Для нанотрубки определены оптимальные значения ее длины и диаметра, при которых для такого транзистора достигаются максимальные величины проводимости канала и обратной подпороговой крутизны его вольт-амперных характеристик.

One of the possible designs of a double-gate quantum-barrier field-effect transistor based on a metallic single-wall carbon nanotube of the zigzag type is considered. The current-voltage characteristics of the transistor with the optimal geometry are calculated in the framework of the developed combined physical and mathematical model describing the charge carrier transport in the conducting channel of the transistor taking into account both quantum-dimensional effects and phonon scattering of particles. Optimum values of the nanotube length and diameter are determined at which the maximum values of the channel conductivity and the subthreshold swing are achieved for such a transistor.

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The authors declare that there are no conflicts of interest present.