MODIFICATION OF THE SURFACE LAYERS OF SILICON SINGLE CRYSTALS IMPLANTED WITH HIGH ENERGY PHOSPHORUS AND BORON IONS

Abstract

Properties of the surface layers of monocrystalline silicon wafers implanted with boron and phosphorus to form a heavily doped "pockets" of CMOS structures was investigated by mass spectrometry of secondary ions, measuring the surface resistivity and microhardness. Near-surface hardening of silicon wafers during implantation was founded. Amorphization of the implanted region of silicon reduces the microhardness of the surface layer. Rapid thermal annealing leads to a softening of the surface layer of the silicon single crystal to a depth of 1 |im and an increase in fracture toughness (K1C and y) at low loads. The experimental results are discussed in terms of the generation of vacances in the process of rapid thermal annealing.