NEGATIVE HIGH-FREQUENCY CAPACITANCE OF ELECTRON-IRRADIATED p-n –TRANSITIONS IN THE AVALANCHE BREAKDOWN MODE
Abstract
The high-frequency (ƒ= 1 MHz) negative capacitance of avalanche diodes irradiated with fast electrons in the breakdown mode has been studied for the first time. It is found that the appearance of a negative capacitance area on the curve for temperature-dependent capacitance is accompanied by a conductivity maximum on a similar curve for temperature-dependent conductivity. It is suggested that this effect is due to the influence of trapping centers on the process of recharging deep levels in the entire space-charge region.
About the Authors
F. P. Korshunov
Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk
Belarus
Belarus
N. E. Jdanovich
Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk
Belarus
Belarus
V. A. Gurinovich
Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk
Belarus
Belarus
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