CHANGE IN THE Cu2ZnSnS4 SINGLE CRYSTALS DIELECTRIC PROPERTIES INDUCED BY ELECTRON IRRADIATION
Abstract
The quaternary compound Cu2ZnSnS4 was synthesized by the one-temperature method from the elementary components. Single crystals of Cu2ZnSnS4 were grown by chemical gas-transmission. Samples were prepared in the form of plane singlecrystal plates with a size of more than 2×5×0.5 mm. The electrical conductivity and dielectric properties of Cu2ZnSnS4 single crystals are investigated in the temperature range 100–300 K at the measuring field frequencies of 103–106 Hz. Non-irradiated samples and those irradiated by electrons with an energy of 4 MeV and doses of 1015 and 1016 cm-2are studied. It is shown that the absolute values of the studied characteristics increase with temperature. The curves σ = f(T) have the areas with different slopes, which indicates the presence of several types of conduction in the investigated semiconductors. The dispersion of the dielectric properties of the studied single crystals is revealed: as the frequency is increased, dielectric constant values decrease and, as electrical conductivity is increased, these values grow. Increasing the radiation decreases dielectric permittivity and causes a significant growth of electrical conductivity in the entire investigated temperature range.
About the Authors
V. G. Hurtavy
Scientific-Practical Materials Research Center of the National Academy of Sciences of Belarus
Russian Federation
Researcher
Russian Federation
Researcher
A. U. Sheleg
Scientific-Practical Materials Research Center of the National Academy of Sciences of Belarus
Russian Federation
D. Sc. (Physics and Mathematics), Professor, Chief Researcher
Russian Federation
D. Sc. (Physics and Mathematics), Professor, Chief Researcher
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