INJECTION ANNEALING OF RADIATION-INDUCED INTERSTITIAL DEFECTS IN BORON DOPED SILICON CRYSTALS

Abstract

Using the same n⁺–p diode structures, the effect of injection of minority charge carriers on the annealing of various interstitial defects has been studied in silicon irradiated with α-particles. It has been found that the self-interstitial silicon atoms (Sii) possess the highest sensitivity to forward current injection. At a liquid nitrogen temperature and a forward current density of 10–20 mA/cm², the time constant for Sii annealing is about a few seconds. To activate the interstitial boron atoms at Т ≤ 140 K, substantially higher direct current densities are required (≥ 100 mA/cm²). However, it has been found that the forward current injection not only enhances, but even causes the retardation of interstitial carbon annealing. It is suggested that only the reactions of interstitial atoms, characterized by a strong electron-phonon coupling, can be enhanced by recombination processes.