Influence of radiation-thermal defects on characteristics of p-n-p-n-structures
https://doi.org/10.29235/1561-2430-2018-54-3-353-359
Abstract
The article presents the results of study of the effect of radiation defects (RD) and thermally stable (up to 873 K) radiation-thermal defects (RTD), created by electron irradiation with an energy of 4 MeV and heat treatment on the static and dynamic characteristics of silicon thyristor p-n-p-n structures. The dependences of turn-on and turn-off current on the life-time of minority charge carriers at a high injection level (in the range of 1.0–10 mks) are obtained in a thick n-base of structures with RD and RTD defects and the same dependences of the minority charge carriers lifetime at a low injection level. DLTS-spectra of the investigated structures and temperature dependences of control current and control voltage in the temperature range of 77–320 K are presented as well.
About the Authors
F. P. Korshunov
Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus
Belarus
Belarus
Fedor P. Korshunov – Corresponding Member, Dr. Sc. (Engineering), Professor, Chief Researcher of the Laboratory of the Radiation Effects.
19, P. Brovka Str., 220072, Minsk.
N. E. Zhdanovich
Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus
Belarus
Belarus
Nikolai E. Zhdanovich – Researcher of the Laboratory of the Radiation Effects.
19, P. Brovka Str., 220072, Minsk.
V. A. Gurinovich
Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus
Belarus
Belarus
Valentina A. Gurinovich – Researcher of the Laboratory of the Radiation Effects.
19, P. Brovka Str., 220072, Minsk.
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