Simulating of charge build-up in irradiated MOS/SOI transistors | Ogorodnikov | Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series

Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series
Vescì Nacyânalʹnaj akadèmìì navuk Belarusì. Seryâ fìzìka-matèmatyčnyh navuk

бел | eng | рус

ISSN 1561-2430 (Print)
ISSN 2524-2415 (Online)

Preview

Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series

Advanced search

Archives

Download this PDF file

Views: 355

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 License.

ISSN 1561-2430 (Print)
ISSN 2524-2415 (Online)

* not an advertisement

Indexing Databases

* not an advertisement

Popular articles

Editor-in-Chief

Orlovich V.A.

Article Tools

Finding References

Email this article (Login required)

Email the author (Login required)

About the Authors

D. A. Ogorodnikov
SSPA “Scientific-Practical Materials Research Centre of NAS of Belarus”
Russian Federation

Dmitriy A. Ogorodnikov – Junior Researcher.

19, P. Brovka Str., 220072, Minsk

S. B. Lastovskii
SSPA “Scientific-Practical Materials Research Centre of NAS of Belarus”
Russian Federation

Stanislav B. Lastovskii – Ph. D. (Physics and Mathematics), Head of the Laboratory of Radiation Effects.

19, P. Brovka Str., 220072, Minsk

Yu. V. Bogatyrev
SSPA “Scientific-Practical Materials Research Centre of NAS of Belarus”
Russian Federation

Yuriy V. Bogatyrev – Dr. Sc. (Engineering), Chief Researcher.

19, P. Brovka Str., 220072, Minsk

Notifications