Model of stationary migration of free and hopping via acceptors holes in a crystalline semiconductor
https://doi.org/10.29235/1561-2430-2020-56-1-92-101
Abstract
In the diffusion-drift approximation, we have constructed a phenomenological theory of the coexisting migration of v-band holes and holes by means of hopping from hydrogen-like acceptors in the charge state (0) to acceptors in the charge state (−1). A p-type crystalline semiconductor is considered at a constant temperature, to which an external stationary electric field is applied. In the linear approximation, analytical expressions for the screening length of the static electric field and the length of the diffusion of v-band holes and the holes quasilocalized on acceptors are obtained for the first time. The presented relations, as special cases, contain well-known expressions. It is shown that the hopping migration of holes via acceptors leads to a decrease in the screening length and in the diffusion length.
Keywords
Supporting agencies: The work was supported by the Belarusian National Research Programme “Fizmattekh”, the Belarusian Republican Foundation for Fundamental Rese arch (Grant No. Ф19РM-054), and by the European Union Framework Programme for Research and Innovation Horizon 2020 (Grant No. H2020-MSCA-RISE-2019-871284 SSHARE).
About the Authors
N. A. Poklonski
Belarusian State University
Belarus
Belarus
Nikolai A. Poklonski – Dr. Sc. (Physics and Mathematics), Professor
4, Nezavisimosti Ave., 220030, Minsk
A. N. Dzeraviaha
Belarusian State University
Belarus
Belarus
Aliaksandr N. Dzeraviaha – Postgraduate Student
4, Nezavisimosti Ave., 220030, Minsk
S. A. Vyrko
Belarusian State University
Belarus
Belarus
Sergey A. Vyrko – Ph. D. (Physics and Mathematics), Senior Researcher
4, Nezavisimosti Ave., 220030, Minsk
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