Mathematical and computer simulation of semiconductor systems of various dimensions and the elements of device structures based on them
https://doi.org/10.29235/1561-2430-2021-57-4-495-505
Abstract
The article, in the form of a minireview, reflects the results of theoretical, and partly experimental investigations of the electrical, optical and magnetic phenomena in three-dimensional, two-dimensional, one-dimensional and zero-dimensional systems and elements of device structures made of germanium, silicon, carbon and other chemical elements carried out at the Faculty of Physics of Belarusian State University over the past 25 years.
Keywords
simulation of crystalline systems of various dimensions,
hydrogen-like (double-charged) impurity atoms,
triple-charged point defects in semiconductors,
ionization equilibrium,
theory of hopping transport of electrons and holes via defects,
graphene,
single-wall carbon nanotubes,
fullerenes,
elements of device structures
About the Author
N. A. Poklonski
Belarusian State University
Belarus
Belarus
Nikolai A. Poklonski – Dr. Sc. (Physics and Mathematics), Professor
4, Nezavisimosti Ave., 220030, Minsk
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