RADIATION EFFECTS IN THIN HETEROEPITAXIAL INDIUM NITRIDE FILMS UNDER ELECTRON IRRADIATION
Abstract
The influence of high energy (6 MeV, fluencies 1015–1018 cm–2) electron irradiation on the shift of a fundamental absorption edge and on the luminescence properties of thin InN films, which were grown on sapphire substrates by the molecular-beam epitaxy method, has been studied. It is found that electron irradiation increases the electron concentration and optical band gap energy Eg of InN. The increase in the optical band gap energy Eg of irradiated thinInN films is caused by the formation of radiation defects of donor type and by a manifestation of the Burshtein – Moss effect.
About the Authors
A. V. Mudryi
Scientific and Practical Materials Research Centre of the National Academy of Sciences of Belarus, Minsk
Belarus
Belarus
V. D. Zhivulko
Scientific and Practical Materials Research Centre of the National Academy of Sciences of Belarus, Minsk
Belarus
Belarus
A. L. Gurskii
Belarusian State University of Informatics and Radioelectronics, Minsk
Belarus
Belarus
M. V. Yakushev
University of Strathclyde, Glasgow
United Kingdom
United Kingdom
R. W. Martin
University of Strathclyde, Glasgow
United Kingdom
United Kingdom
W. J. Schaff
Cornell University, Ithaca
United States
United States
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