CALCULATION OF ELECT RON ENERGY BANDS AND OPTICAL PARAMETERS OF TIN SULFIDES
Abstract
The electron energy band structure and optical properties of various phases of tin sulfide were theoretically estimated by computer simulation. All the investigated materials were found to be indirect-gap semiconductors with a band gap ranging from 0.17 to 2.4 eV. The band gap in the range of 1.0–1.5 eV and the absorption coefficient near the fundamental absorption edge of more than 105 cm–1 in the cubic and orthorhombic phases of tin sulfide with a stoichiometric composition of SnS make them promising for solar energy conversion.
About the Authors
V. L. SHAPOSHNIKOV
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
A. V. KRIVOSHEEVA
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
V. E. BORISENKO
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
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