The structure and optical properties of semiconductor nitrides MgSiN2, MgGeN2, ZnSiN2, ZnGeN2
https://doi.org/10.29235/1561-2430-2022-58-4-424-430
Abstract
Theoretical modeling within LDA, GGA, and PBE approximations was herein performed to determine the electronic band structures of MgGeN2, MgSiN2, ZnGeN2, and ZnSiN2 nitride compounds and their optical properties. It is established that the compounds with germanium are direct-gap semiconductors with the band gap values of 3.0 eV (MgGeN2) and 1.7 eV (ZnGeN2), while the silicon-based compounds are indirect-gap semiconductors with the band gap values of 4.6 eV (MgSiN2) and 3.7 eV (ZnSiN2). Optical properties analysis showed the prospects of using MgGeN2 and ZnGeN2 in optoelectronics.
Supporting agencies: This work was supported by the State Program of Scientific Research of the Republic of Belarus “Materials science, novel materials and technologies”. The authors are grateful to Prof. V.E. Borisenko for valuable advices and fruitful discussions.
About the Authors
A. V. Krivosheeva
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Anna V. Krivosheeva – Dr. Sc. (Physics and Mathematics), Leading Researcher, Belarusian State University of Informatics and Radioelectronics.
6, P. Brovka Str., 220013, Minsk
V. L. Shaposhnikov
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Victor L. Shaposhnikov – Ph. D. (Physics and Mathematics), Leading Researcher. Belarusian State University of Informatics and Radioelectronics.
6, P. Brovka Str., 220013, Minsk
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