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Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series

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EFFECT OF ELECTRON RADIATION ON THE ELECTRICAL CHARACTERISTICS OF THE p-n-STRUCTURES BASED ON NUCLEAR-DOPED SILICON

Abstract

The article studies the effect of electron radiation with energy of 4 MeV on the characteristics of high-voltage (4.5 kV) silicon diode p-n-structures based on nuclear-doped silicon. During the research the dose dependences of the correlations between the static and dynamic characteristics of the p-n structures were built, and the radiation damage coefficient of minority carrier lifetime Kτ was determined. Using the DLTS-spectroscopy method, the formation in the band-gap of basic n-Si of six energy levels of radiation defects affecting the characteristics of irradiated p-n-structures was determined. 

About the Authors

F. P. Korshunov
Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk
Belarus


N. E. Zhdanovich
Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk
Belarus


V. A. Gurinovich
Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk
Belarus


S. V. Luksha
Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk
Belarus


References

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2. Коршунов, Ф. П. Воздействие радиации на интегральные микросхемы / Ф. П. Коршунов, Ю. В. Богатырев, В. А. Вавилов. – Минск: Наука и техника, 1986.

3. Lox, B. Transient response of p-n-junction / B. Lox, S. T. Newstadter // J. Appl. Phys. – 1954. – Vol. 25. – P. 1148–1154.

4. Епифанов, Г. И. Физические основы микроэлектроники / Г. И. Епифанов. – М.: Сов. радио, 1971.

5. Гаман, В. И. Физика полупроводниковых приборов / В. И. Гаман. – Томск: Изд-во Том. ун-та, 1989.

6. Коршунов, Ф. П. Радиационные эффекты в полупроводниковых приборах / Ф. П. Коршунов, Г. В. Гатальский, Г. М. Иванов. – Минск: Наука и техника, 1978.


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ISSN 1561-2430 (Print)
ISSN 2524-2415 (Online)