Temperature dependence of the band gap of AgIn7S11 single crystals
https://doi.org/10.29235/1561-2430-2023-59-1-81-86
Abstract
AgIn7S11 single crystals are herein grown by the vertical Bridgman method. The composition of the obtained single crystals is determined by X-ray microprobe analysis as well as the crystal structure – by X-ray diffraction analysis. It is shown that the obtained single crystals are crystallized in the cubic spinel structure. Using transmission spectra in the tem- perature range 10–320 K we determined the band gap of these single crystals and plotted its temperature dependence. This dependence is similar to that of the majority of semiconductor materials, namely, Eg increases with decreasing the tempera- ture. We showed the agreement of the calculated and experimental values.
About the Authors
I. V. Bodnar
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Ivan V. Bodnar – Dr. Sc. (Chemistry), Professor of the Department of Information and Computer Systems Design
6, P. Brovka Str., 220013, Minsk
A. A. Feshchanka
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Artsiom A. Feshchanka – Ph. D. (Engineering), As- sociate Professor of the Department of Information and Computer Systems Design
6, P. Brovka Str., 220013, Minsk
V. V. Khoroshko
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Vitaliy V. Khoroshko – Ph. D. (Engineering), Head of the Department of Information and Computer Systems Design
6, P. Brovka Str., 220013, Minsk
V. N. Pavlovsky
B. I. Stepanov Institute of Physics of the National Academy of Sciences of Belarus
Belarus
Belarus
Vyacheslav N. Pavlovsky – Ph. D. (Physics and Mathe- matics), Associate Professor, Leading Researcher
68-2, Nezavisimosti Ave., 220072, Minsk
I. E. Svitenkov
B. I. Stepanov Institute of Physics of the National Academy of Sciences of Belarus
Belarus
Belarus
Ilya E. Svitenkov – Researcher
68-2, Nezavisimosti Ave., 220072, Minsk
G. P. Yablonskii
B. I. Stepanov Institute of Physics of the National Academy of Sciences of Belarus
Belarus
Belarus
Gennady P. Yablonskii – Dr. Sc. (Physics and Mathe- matics), Professor
68-2, Nezavisimosti Ave., 220072, Minsk
References
1. Chopra K., Das S. Thin Film Solar Cells. New York, Springer, 1983. https://doi.org/10.1007/978-1-4899-0418-8
2. Coutts T., Meakin J. (eds.). Current topics in photovoltaics. London, Academic Press, 1985.
3. Mitchel K., Eberspacher C., Ermer J., Pier D. Single and tandem junction CuInSe2 cell and module technology. Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference. New York, Institute of Electrical and Electronics Engineers, 1988, vol. 2, pp. 1384–1388. https://doi.org/10.1109/pvsc.1988.105935
4. Wei Chen, Bovin J.-O., Joly A. G., Shaopeng Wang, Fuhai Su, Guohua Li. Full-Color Emission from In2S3 and In2S3:Eu3+ Nanoparticles. The Journal of Physical Chemistry B, 2004, vol. 108. no. 32, pp. 11927–11934. https://doi.org/10.1021/jp048107m
5. Sebentritt S. Alternative buffers for chalcopyrite solar cells. Solar Energy, 2004, vol. 77, no. 7, pp. 767–775. https://doi.org/10.1016/j.solener.2004.06.018
6. Asenjo B., Chaparro A. M., Gutierrez M. T., Herrero J., Klaer J. Influence of In2S3 film properties on the behavior of CuInS2/In2S3/ZnO type solar cells. Solar Energy Materials and Solar Cells, 2005, vol. 87, no. 1–4, pp. 647–656. https://doi.org/10.1016/j.solmat.2004.07.043
7. Schulmeyer T., Klein A., Kniese R., Powalla M. Band offset at the CuGaSe2/In2S3 heterointerface. Applied Physics Letters, 2004, vol. 85, no. 6, pp. 961–963. https://doi.org/10.1063/1.1779340
8. Bodnarʼ I. V., Kudritskaya E. A., Polushina I. K., Rudʼ V. Yu., Rudʼ Yu. V. Physical properties of CuxAg1−x In5S8 single crystals and related surface-barrier structures. Semiconductors, 1998, vol. 32, no. 9, pp. 933–936. https://doi.org/10.1063/1.1779340
9. Bodnarʼ I. V., Gremenok V. F., Rudʼ V. Yu., Rudʼ Yu. V. Production and investigation of AgIn5S8/(InSe, GaSe) heterojunctions. Semiconductors, 1999, vol. 33, no. 7, pp. 805–809. https://doi.org/10.1134/1.1187773
10. Bodnar I. V., Victorov I. A., Dabranski V. M., Osipova M. A. Solid solutions in In2S3–MnIn2S4 system. Physica Status Solidi C, 2009, vol. 6, no. 5, pp. 11301132. https://doi.org/10.1002/pssc.200881228
11. Bodnar I. V., Tran Binh Than. Investigation of the MnIn2S4–AgIn5S8 system. Doklady BGUIR, 2018, vol. 111, no. 1, pp. 57–64 (in Russian).
12. Ukhanov Yu. I. Optical Properties of Semiconductors. Moscow, Nauka Publ., 1977. 368 p. (in Russian).
13. Rembeza S. I. Methods for Measuring the Main Parameters of Semiconductors. Voronezh, VSU Publ., 1989. 221 p. (in Russian).
14. Willardson R., Beer A. C. (eds.) Semiconductors and semimetals. New York, Academic Press, 1966.
Review
Views: 388
Email this article 