IR ABSORPTION STADIES OF VACANCY-OXYGEN RELATED COMPLEXES IN FAST ELECTRON AND NETRON-IRRADIATED SILICON CRYSTALS
Abstract
By means of infrared absorption spectroscopy a clear correlation between the disappearance of the divacancy (V2 in the temperature range 200-275 °C and the appearance of two absorption bands positioned at 833.4 and 842.4 cm-1 in irradiated oxygen-rich Si crystals has been found. Both these two emerging bands have previously been assigned to a divacancy-oxygen defect V2O formed via interaction of mobile V2 with interstitial oxygen (Ot) atoms. The present study shows, however, that the two bands arise from different defects since the ratio of their intensities depends on the type of irradiation and only the band at 833.4 cm-1 can be assigned to V2O. The 842.4 cm-1 band is much more pronounced in neutron irradiated samples as compared to the samples irradiated with electrons. We argue that it is related to a trivacancy-oxygen defect (V3O) formed via interaction of mobile V3 with Oi atoms.
About the Authors
E. A. Tolkacheva
Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk
Belarus
Belarus
L. I. Murin
Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk
Belarus
Belarus
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